2SJ410 Silicon P-Channel MOS FET ADE-208-539 1st. Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter and motor driver Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SJ410 Absolute Maximum Rat.
•
•
•
•
• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter and motor driver
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SJ410
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg
2 1
Ratings
–200 ±20
–6
–24
–6 30.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ411 |
NEC |
P-Channel MOSFET | |
2 | 2SJ412 |
Toshiba Semiconductor |
P-Channel MOSFET | |
3 | 2SJ413 |
Sanyo Semicon Device |
P-Channel MOSFET | |
4 | 2SJ416 |
Sanyo Semicon Device |
P-Channel MOSFET | |
5 | 2SJ417 |
Sanyo Semicon Device |
P-Channel MOSFET | |
6 | 2SJ418 |
Sanyo Semicon Device |
P-Channel MOSFET | |
7 | 2SJ419 |
Sanyo Semicon Device |
P-Channel MOSFET | |
8 | 2SJ400 |
Sanyo Semicon Device |
P-Channel MOSFET | |
9 | 2SJ401 |
Toshiba Semiconductor |
P-Channel MOSFET | |
10 | 2SJ402 |
Toshiba Semiconductor |
P-Channel MOSFET | |
11 | 2SJ406 |
Sanyo Semicon Device |
P-Channel MOSFET | |
12 | 2SJ407 |
Toshiba Semiconductor |
P-Channel MOSFET |