2SJ402 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ402 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance : |Yfs| = 23 S (typ.) z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) z Enhanc.
pplication of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics JEDEC ― JEITA ― TOSHIBA 2-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ400 |
Sanyo Semicon Device |
P-Channel MOSFET | |
2 | 2SJ401 |
Toshiba Semiconductor |
P-Channel MOSFET | |
3 | 2SJ406 |
Sanyo Semicon Device |
P-Channel MOSFET | |
4 | 2SJ407 |
Toshiba Semiconductor |
P-Channel MOSFET | |
5 | 2SJ409 |
Hitachi Semiconductor |
P-Channel MOSFET | |
6 | 2SJ409L |
Hitachi Semiconductor |
P-Channel MOSFET | |
7 | 2SJ409S |
Hitachi Semiconductor |
P-Channel MOSFET | |
8 | 2SJ410 |
Hitachi Semiconductor |
P-Channel MOSFET | |
9 | 2SJ411 |
NEC |
P-Channel MOSFET | |
10 | 2SJ412 |
Toshiba Semiconductor |
P-Channel MOSFET | |
11 | 2SJ413 |
Sanyo Semicon Device |
P-Channel MOSFET | |
12 | 2SJ416 |
Sanyo Semicon Device |
P-Channel MOSFET |