2SJ411 - NEC

2SJ411 P-Channel MOSFET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ411 P-CHANNEL SIGNAL MOS FET FOR SWITCHING The 2SJ411 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for power control switches and DC/DC.

Features

• Radial taping supported
• Can be directly driven by 5-V IC
• Low ON resistance RDS(on) = 0.24 Ω MAX. @VGS =
  –4 V, ID =
  –2.5 A RDS(on) = 0.11 Ω MAX. @VGS =
  –10 V, ID =
  –2.5 A 0.6 ±0.1 0.6 ±0.1 0.6 ±0.1 1.71.7 0.55 ±0.1 G D S EQUIVALENT CIRCUIT Drain (D) Gate (G) Internal Diode 4.0 MAX. 1.5 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 µs Duty cycle ≤ 1 % TA = 25 ˚C TC = 25 ˚C VGS = 0 VDS = 0 Gate Source (S) Protection Diode PIN CONNECTIONS G: Gate D: .