2SJ406 - Sanyo Semicon Device

2SJ406 P-Channel MOSFET

2SJ406 P- Channel Silicon MOS FET Very High-Speed Switching Applications Features and Applications • Low ON-state resistance. • Very high-speed switching. • Low-voltage dreve. • Micaless package facilitating easy mounting. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current (D.C) Drain Current (Pulse) Allowable pow.

Features

and Applications
• Low ON-state resistance.
• Very high-speed switching.
• Low-voltage dreve.
• Micaless package facilitating easy mounting. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current (D.C) Drain Current (Pulse) Allowable power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID PW≤10µS, dutycycle≤1% IDP Tc=25°C PD Tch Tstg --200 ±20 --12 --48 40 150 --55 to +150 unit V V A A W °C °C min V(BR)DSS V(BR)GSS IDSS IGSS VGS(OFF) | yfs | RDS(On)1 Ciss Coss Crss td(On) tr td(Off) tf VSD ID=--1mA , VGS=0 ID=±100µA , VGS=0 VDS=--200V , V.