Ordering number:ENN5366A P-Channel Silicon MOSFET 2SJ413 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2076B [2SJ413] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specification.
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm 2076B
[2SJ413]
3.4 16.0 5.0 8.0 5.6 3.1
21.0
22.0
4.0
2.8 2.0 20.4 1.0
2.0
0.6
1
2
3 3.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW≤10µs, duty cycle≤1% Tc=25˚C
5.45
5.45
Conditions
Ratings
–60 ±20
–50
–200 3.0 70 150
–55 to +150
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ410 |
Hitachi Semiconductor |
P-Channel MOSFET | |
2 | 2SJ411 |
NEC |
P-Channel MOSFET | |
3 | 2SJ412 |
Toshiba Semiconductor |
P-Channel MOSFET | |
4 | 2SJ416 |
Sanyo Semicon Device |
P-Channel MOSFET | |
5 | 2SJ417 |
Sanyo Semicon Device |
P-Channel MOSFET | |
6 | 2SJ418 |
Sanyo Semicon Device |
P-Channel MOSFET | |
7 | 2SJ419 |
Sanyo Semicon Device |
P-Channel MOSFET | |
8 | 2SJ400 |
Sanyo Semicon Device |
P-Channel MOSFET | |
9 | 2SJ401 |
Toshiba Semiconductor |
P-Channel MOSFET | |
10 | 2SJ402 |
Toshiba Semiconductor |
P-Channel MOSFET | |
11 | 2SJ406 |
Sanyo Semicon Device |
P-Channel MOSFET | |
12 | 2SJ407 |
Toshiba Semiconductor |
P-Channel MOSFET |