Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • M type package allowing easy automatic and manual insertion as well .
(1.5)
R 0.9 R 0.7
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SD0662 2SD0662B VCEO VEBO IC PC Tj Tstg Symbol VCBO Rating 250 400 200 400 5 70 600 150 −55 to +150 V mA mW °C °C V Unit V
1.0±0.1
(0.85)
Collector-emitter voltage 2SD0662 (Base open) 2SD0662B Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature
3 (2.5)
2 (2.5)
1.25±0.05
0.55±0.1
1: Base 2: Collector 3: Emitter M-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base.
2SD662B - Panasonic Semiconductor
Transistor 2SD662, 2SD662B Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD662 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD662 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD661 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD661 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 5 | 2SD661A |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 6 | 2SD661A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SD663 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD664 |
Toshiba |
NPN Transistor |
|
| 9 | 2SD665 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SD665 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SD666 |
Hitachi |
Silicon NPN Transistor |
|
| 12 | 2SD666A |
Hitachi |
Silicon NPN Transistor |
|