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2SD662B |
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| Part Number | 2SD662B |
| Manufacturer | Panasonic Semiconductor |
| Description | www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) ... |
| Features |
(1.5)
R 0.9 R 0.7
■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD0662 2SD0662B VCEO VEBO IC PC Tj Tstg Symbol VCBO Rating 250 400 200 400 5 70 600 150 −55 to +150 V mA mW °C °C V Unit V 1.0±0.1 (0.85) Collector-emitter voltage 2SD0662 (Base open) 2SD0662B Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature 3 (2.5) 2 (2.5) 1.25±0.05 0.55±0.1 1: Base 2: Collector 3: Emitter M-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base... |
| Document |
 2SD662B Data Sheet
PDF 99.39KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD662 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD662 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SD662B |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD661 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD661 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|