2SD664 - Toshiba

2SD664 NPN Transistor

SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : hFE=2000(Min.)(VCE=3V, I C=3A) • Low Saturation Voltage • V C E( S at) =1 - 5v (Max.)(I c=3A) • Monolithic Cnstruction with Built-in Base- Emitter Shunt Resistor. Unit in mm 015.7MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Ba.

Features

• High DC Current Gain : hFE=2000(Min.)(VCE=3V, I C=3A)
• Low Saturation Voltage
• V C E( S at) =1 - 5v (Max.)(I c=3A)
• Monolithic Cnstruction with Built-in Base- Emitter Shunt Resistor. Unit in mm 015.7MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT BASEo SYMBOL VcBO VCEO VEBO ic PC T stg RATING 80 80 UNIT 0.2 40 150 -65M.50 OLLECTOR 1 BASE Z EMITTER COLLECTOR(CASE) TO — 66 TC — 16A, TB.