2SD663 - INCHANGE

2SD663 NPN Transistor

·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 500V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated switchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATI.

Features

ss otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 10mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 10mA ICBO Collector Cutoff Current VCB=500V; IE=0 ICEO Collector Cutoff Current VCE= 500V;IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 4A; VCE= 1.5V MIN TYP. MAX UNIT 500 V 500 V 7 V 1.6 V 2.0 V.