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Transistor 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A Unit: mm 6.9±0.1 0.4 q q q 2.4±0.2 2.0±0.2 3.5±0.1 Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the pri.
1.5
1.5 R0.9 R0.9
1.0±0.1
R
0.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB745 2SB745A 2SB745 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
0.85
0.55±0.1
1.25±0.05
0.45±0.05
Ratings
–35
–55
–35
–55
–5
–200
–50 400 150
–55 ~ +150
Unit V
3 2 1
emitter voltage 2SB745A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V mA mA mW ˚C ˚C
1:Base 2:Collector 3:Emitter
2.5
2.5
EIAJ:SC
–71 M Type Mold Package
s Electrical Characteristics
Parameter Collector cutoff current Col.
2SD661A - Panasonic Semiconductor
Transistor 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementar.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD661 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD661 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 3 | 2SD662 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD662 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD662B |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD662B |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SD663 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD664 |
Toshiba |
NPN Transistor |
|
| 9 | 2SD665 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SD665 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SD666 |
Hitachi |
Silicon NPN Transistor |
|
| 12 | 2SD666A |
Hitachi |
Silicon NPN Transistor |
|