·With TO-3 package ·Complement to type 2SB645 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-b.
ut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ;IB=0 IC=10A; IB=1A IC=10A; IB=1A VCB=200V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IE=0 ; VCB=10V;f=1.0MHz IC=1A ; VCE=5V 40 MIN 200 www.datasheet4u.com 2SD665 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V 2.0 2.5 0.1 0.1 140 300 15 V V mA mA pF MHz hFE Classifications O 40-80 R 70-140 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD665 Fig.2 outline dimensions (unindicated tolerance:±.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Current Capability ·Excellent Safe Operating Area ·Com.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD661 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
2 | 2SD661 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
3 | 2SD661A |
Panasonic Semiconductor |
Silicon PNP Transistor | |
4 | 2SD661A |
Panasonic Semiconductor |
Silicon NPN Transistor | |
5 | 2SD662 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
6 | 2SD662 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
7 | 2SD662B |
Panasonic Semiconductor |
Silicon NPN Transistor | |
8 | 2SD662B |
Panasonic Semiconductor |
Silicon NPN Transistor | |
9 | 2SD663 |
INCHANGE |
NPN Transistor | |
10 | 2SD664 |
Toshiba |
NPN Transistor | |
11 | 2SD666 |
Hitachi |
Silicon NPN Transistor | |
12 | 2SD666A |
Hitachi |
Silicon NPN Transistor |