2SD524 |
Part Number | 2SD524 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) _ HIGH POWER SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : h FE=2000 (Min. ) (V CE=3V, I C=5A) • Low Saturation Voltage : VCE (sat... |
Features |
• High DC Current Gain : h FE=2000 (Min. ) (V CE=3V, I C=5A) • Low Saturation Voltage : VCE (sat)=l- 5v • Monolithic Construction With Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT BASE SYMBOL VcBO VCEO VEBO IB ?C L stg RATING 80 80 UNIT V 15 0.2 100 150 -65^150 -COLLECTOR L BASE 2. EMITTER COLLECTOR (... |
Document |
2SD524 Data Sheet
PDF 114.15KB |
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