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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-.
= 0.6A 8.0 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 2A; IB= 0.6A VCB= 800V; IE= 0 1.5 V 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.5A; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V tf Fall Time IC= 2A, IB1= 0.6A; IB2= -1.2A; RL= 100Ω;VCC= 200V 3 MHz 0.4 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC p.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD5070 |
Inchange Semiconductor |
Power Transistor |
|
| 2 | 2SD5071 |
SavantIC |
Silicon NPN Power Transistors |
|
| 3 | 2SD5071 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 4 | 2SD5072 |
Fairchild |
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR |
|
| 5 | 2SD5072 |
Savantic |
Silicon NPN Power Transistors |
|
| 6 | 2SD5072 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 7 | 2SD5075 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD5075 |
Savantic |
Silicon NPN Power Transistors |
|
| 9 | 2SD5075T |
Savantic |
Silicon NPN Power Transistors |
|
| 10 | 2SD5075T |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 11 | 2SD5076 |
Savantic |
Silicon NPN Power Transistors |
|
| 12 | 2SD5076 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|