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2SD5011 |
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| Part Number | 2SD5011 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA... |
| Features |
ector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A
8.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A ;IB= 0.8A
1.5
V
IEBO
Emitter Cutoff Current
VEB= 4V; IC=0
40
130 mA
ICBO
Collector-Base Cutoff Current
VCB=800V; IE= 0
10
uA
hFE
DC Current Gain
IC= 0.5A ; VCE= 5V
8
fT
Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V
3
MHz
VECF
C-E Diode Forward Voltage
tf
Fall Time
IF= 3.5A
IC= 3A, IB1= 0.8A; IB2= -1.6A RL= 66.7Ω;VCC= 200V
2.0
V
0.4
us
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification... |
| Document |
 2SD5011 Data Sheet
PDF 189.67KB |
| Distributor | Stock | Price | Buy |
|---|
