2SD2123S - Hitachi Semiconductor

2SD2123S Silicon NPN Transistor

2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter .

Features

— — — 180 14 Max — — — 10 200 — 1 1.5 — — V V MHz pF Unit V V V µA A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA
*1 VCE = 5 V, IC = 500 mA
*1 I C = 500 mA, I B = 50 mA
*1 VCE = 5 V, IC = 150 mA
*1 VCE = 5 V, IC = 150 mA
*1 VCB = 10 V, IE = 0, f = 1 MHz Min 180 120 5 — 60 30 — — — — Typ — — — — — — — — 180 14 Max — — — 10 200 — 1 1.5 — — DC current transfer ratio hFE1
* hFE2 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product f T Collector output capacitance Cob Notes: 1. .