2SD2123S Hitachi Semiconductor Silicon NPN Transistor Datasheet, en stock, prix

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2SD2123S

Hitachi Semiconductor
2SD2123S
2SD2123S 2SD2123S
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Part Number 2SD2123S
Manufacturer Hitachi Semiconductor
Description 2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3...
Features — — — 180 14 Max — — — 10 200 — 1 1.5 — — V V MHz pF Unit V V V µA A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*1 VCE = 5 V, IC = 500 mA*1 I C = 500 mA, I B = 50 mA*1 VCE = 5 V, IC = 150 mA*1 VCE = 5 V, IC = 150 mA*1 VCB = 10 V, IE = 0, f = 1 MHz Min 180 120 5 — 60 30 — — — — Typ — — — — — — — — 180 14 Max — — — 10 200 — 1 1.5 — — DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product f T Collector output capacitance Cob Notes: 1. ...

Document Datasheet 2SD2123S Data Sheet
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