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Ordering number:EN3239 NPN Epitaxial Planar Silicon Transistor 2SD2120 General Driver Applications Features · Darlington connection (Contains bias resistance, damper diode). · High DC current gain. · Less dependence of DC current gain on temperature. Package Dimensions unit:mm 2064A [2SD2120] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 0.9 1 Specifications.
· Darlington connection (Contains bias resistance, damper diode).
· High DC current gain.
· Less dependence of DC current gain on temperature.
Package Dimensions
unit:mm
2064A
[2SD2120]
2.5
1.45
6.9 1.0
4.0 1.0
4.5 1.0
0.9 1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
2.54 Conditions
Parameter
Col.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD2121 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor |
|
| 2 | 2SD2121L |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor |
|
| 3 | 2SD2121S |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor |
|
| 4 | 2SD2122 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD2122L |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD2122S |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SD2123 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SD2123L |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SD2123S |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 10 | 2SD2124 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SD2124L |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SD2124S |
Hitachi Semiconductor |
Silicon NPN Transistor |
|