2SD2121L - Hitachi Semiconductor

2SD2121L Silicon NPN Epitaxial Planar Transistor

2SD2121(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1407(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Colle.

Features

akdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1
* hFE2 Base to emitter voltage Collector to emitter saturation voltage VBE VCE(sat) 60 20 — — V V Notes: 1. The 2SD2121(L)/(S) is grouped by hFE1 as follows. B 60 to 120 C 100 to 200 D 160 to 320 2. Pulse test. Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 10 Area of Safe Operation Collector current IC (A) 20 3.0 iC(peak) IC(max) PW = 10 ms s 1m tion era Op °C) DC = 25 (T C 1.0 10 0.3 Ta = 25°C 1 shot pulse 0.1 0 50 100 Cas.