2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter .
— — — 180 14 Max — — — 10 200 — 1 1.5 — — V V MHz pF Unit V V V µA A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA
*1 VCE = 5 V, IC = 500 mA
*1 I C = 500 mA, I B = 50 mA
*1 VCE = 5 V, IC = 150 mA
*1 VCE = 5 V, IC = 150 mA
*1 VCB = 10 V, IE = 0, f = 1 MHz
Min 180 120 5 — 60 30 — — — —
Typ — — — — — — — — 180 14
Max — — — 10 200 — 1 1.5 — —
DC current transfer ratio hFE1
* hFE2 Collector to emitter saturation voltage
VCE(sat)
Base to emitter voltage VBE Gain bandwidth product f T Collector output capacitance Cob
Notes: 1. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD2122 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
2 | 2SD2122L |
Hitachi Semiconductor |
Silicon NPN Transistor | |
3 | 2SD2120 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
4 | 2SD2121 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor | |
5 | 2SD2121L |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor | |
6 | 2SD2121S |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor | |
7 | 2SD2123 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
8 | 2SD2123L |
Hitachi Semiconductor |
Silicon NPN Transistor | |
9 | 2SD2123S |
Hitachi Semiconductor |
Silicon NPN Transistor | |
10 | 2SD2124 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
11 | 2SD2124L |
Hitachi Semiconductor |
Silicon NPN Transistor | |
12 | 2SD2124S |
Hitachi Semiconductor |
Silicon NPN Transistor |