2SD2124(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 1. Base 2. Collector 3. Emitter 4. Collector 2, 4 1 ID 6 kΩ (Typ) 0.5 kΩ (Typ) 3 S Type 3 L Type 2SD2124(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cu.
BE = ∞ VCE = 3 V, IC = 1 A
*1 I C = 1 A, IB = 1 mA
*1 I C = 1.5 A, IB = 1.5 mA
*1 I C = 1 A, IB = 1 mA
*1 I C = 1.5 A, IB = 1.5 mA
*1 I D = 1.5 A
*1 I C = 1 A, IB1 =
–IB2 = 1 mA
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. hFE VCE(sat) VCE(sat) VBE(sat) VBE(sat) VD t on t off
2
2SD2124(L)/(S)
Maximum Collector Dissipation Curve 30 Collector.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD2124 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
2 | 2SD2124S |
Hitachi Semiconductor |
Silicon NPN Transistor | |
3 | 2SD2120 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor | |
4 | 2SD2121 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor | |
5 | 2SD2121L |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor | |
6 | 2SD2121S |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor | |
7 | 2SD2122 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
8 | 2SD2122L |
Hitachi Semiconductor |
Silicon NPN Transistor | |
9 | 2SD2122S |
Hitachi Semiconductor |
Silicon NPN Transistor | |
10 | 2SD2123 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
11 | 2SD2123L |
Hitachi Semiconductor |
Silicon NPN Transistor | |
12 | 2SD2123S |
Hitachi Semiconductor |
Silicon NPN Transistor |