2SD2115L - Hitachi Semiconductor

2SD2115L Silicon NPN Transistor

2SD2115(L)/(S) Silicon NPN Epitaxial Planar Application Low frequency power amplifier Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector powe.

Features

n V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1. Pulse test. V(BR)EBO I CBO hFE VCE(sat) VBE(sat) tf Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 3.0 Area of Safe Operation iC(peak) IC(max) Collector current IC (A) s ) 1m 5°C s =2 0m (T C =1 tion PW era Op DC 1.0 20 0.3 10 0.1 Ta = 25°C, 1 shot pulse 0.03 0 50 100 Case temperature TC (°C) 150 1 3 10 30 100 Collector to emitter voltage VCE (V) 2 2SD2115(L)/(S.