2SD2113 - Inchange Semiconductor

2SD2113 Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1.5A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIM.

Features

ified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 3mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 30mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1.5A; IB= 3mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 3A; IB= 30mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ hFE DC Current Gain .