2SD2114 - SeCoS

2SD2114 NPN Transistor

Elektronische Bauelemente 2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE  High DC Current Gain.  High Emitter-Base Voltage. VEBO=12V (Min.) CLASSIFICATION OF hFE Product-Rank 2SD2114-V Range 820~1800 Marking BBV SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J .

Features

V V mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance On Resistance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob R(on) Min. 25 20 12 820 - Typ. 350 8 0.8 Max. 0.5 0.5 1800 0.4 - Unit V V V μA μA V MHz pF Ω Test Conditions IC=10μA, IE=0 IC=1mA, IB=0 IE=10μA, IC=0 VCB=20V, .