Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
www.DataSheet4U.com 2SD2111 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 3.0 kΩ (Typ) 400 Ω (Typ) 3 12 3 www.DataSheet4U.com 2SD2111 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current.
= 3 A, IB = 30 mA
* IC = 3 A, IB = 30 mA
* ID = 3 A
*
1 1
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD
IC = 1.5 A, IB = 3 mA
*
1
1
IC = 1.5 A, IB = 3 mA
*
1
1
See switching characteristic curve of 2SD1605.
2
www.DataSheet4U.com
2SD2111
Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W)
20
1.
2SD2111 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max).
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD211 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SD211 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD2110 |
Inchange Semiconductor |
Power Transistor |
|
| 4 | 2SD2112 |
Inchange Semiconductor |
Power Transistor |
|
| 5 | 2SD2113 |
Inchange Semiconductor |
Power Transistor |
|
| 6 | 2SD2114 |
JCST |
NPN Transistor |
|
| 7 | 2SD2114 |
SeCoS |
NPN Transistor |
|
| 8 | 2SD2114K |
Rohm |
High-current Gain Medium Power Transistor |
|
| 9 | 2SD2114K |
Kexin |
Power Transistor |
|
| 10 | 2SD2115 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor |
|
| 11 | 2SD2115L |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SD2115S |
Hitachi Semiconductor |
Silicon NPN Transistor |
|