2SD2110 - Inchange Semiconductor

2SD2110 Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RA.

Features

SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A; IB= 4mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 40mA ICBO Collector Cutoff Current VCB= 65V; IE= 0 ICEO Collector Cutoff Current VCE= 65V; RBE= ∞ hFE DC Current Gain IC= 2A; VCE.