·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM R.
ied SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 60mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 3A; IB= 6mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 6A; IB= 60mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ hFE DC Current Gain IC= 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD211 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SD211 |
INCHANGE |
NPN Transistor | |
3 | 2SD2110 |
Inchange Semiconductor |
Power Transistor | |
4 | 2SD2111 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
5 | 2SD2111 |
INCHANGE |
NPN Transistor | |
6 | 2SD2113 |
Inchange Semiconductor |
Power Transistor | |
7 | 2SD2114 |
JCST |
NPN Transistor | |
8 | 2SD2114 |
SeCoS |
NPN Transistor | |
9 | 2SD2114K |
Rohm |
High-current Gain Medium Power Transistor | |
10 | 2SD2114K |
Kexin |
Power Transistor | |
11 | 2SD2115 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor | |
12 | 2SD2115L |
Hitachi Semiconductor |
Silicon NPN Transistor |