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Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 Structure Epitaxial planar type NPN silicon transistor 0.5±0.1 Dimensions (Unit : mm) 2SD1766 4.5+−00..21 1.6±0.1 1.5 +0.2 −0.1 2SD1758 6.5±0.2 5.1+−00..21 C0.5 2.3+−00..
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240
Structure Epitaxial planar type NPN silicon transistor
0.5±0.1
Dimensions (Unit : mm)
2SD1766
4.5+−00..21 1.6±0.1
1.5
+0.2 −0.1
2SD1758
6.5±0.2 5.1+−00..21
C0.5
2.3+−00..21 0.5±0.1
5.5+−00..31 1.5±0.3 0.9 1.5
2.5 9.5±0.5
4.0±0.3 2.5+−00..21
1.0±0.2
(1) (2) (3)
0.4±0.1 1.5±0.1
0.5±0.1 3.0±0.2
0.4±0.1 1.5±0.1
0.4
+0.1 −0.05
Abbreviated symbol : DB∗
ROHM : MPT3 EIAJ : SC-62
(1) Base (2) Collector (3) Emitter
2SD1862
6.8±0.2
2.5±0.2
0.75 0.9
0.65±0.1
2.3±0.2 2.3±0..
2SD1862 - BLUE ROCKET ELECTRONICS
TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features , 2SB1240 。 Low VCE(sat),complement.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD186 |
ETC |
NPN Transistor |
|
| 2 | 2SD1861 |
Rohm |
Power transistor |
|
| 3 | 2SD1863 |
Rohm |
Power Transistor |
|
| 4 | 2SD1864 |
Rohm |
Power Transistor |
|
| 5 | 2SD1864 |
GME |
Power Transistor |
|
| 6 | 2SD1864 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 7 | 2SD1865 |
Rohm |
MEDIUM POWER TRANSISTOR |
|
| 8 | 2SD1866 |
Rohm |
Medium Power Transistor |
|
| 9 | 2SD1867 |
Rohm |
Power Transistor |
|
| 10 | 2SD1868 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor |
|
| 11 | 2SD1869 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor |
|
| 12 | 2SD180 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|