Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 Structure Epitaxial planer type NPN silicon transistor Dimensions (Unit : mm) 2SD1898 4.5+−00..21 1.6±0.1 1.5−+00..12 0.5±0.1 4.0±0.3 2.5+−00..2.
1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 /
2SB1241 / 2SB1181
Structure Epitaxial planer type NPN silicon transistor
Dimensions (Unit : mm)
2SD1898
4.5+−00..21 1.6±0.1
1.5−+00..12
0.5±0.1
4.0±0.3 2.5+−00..21
ROHM : MPT3 EIAJ : SC-62
2SD1733
6.5±0.2 5.1+−00..21
C0.5
1.0±0.2
(1) (2) (3)
0.4±0.1 1.5±0.1
0.5±0.1 3.0±0.2
0.4±0.1 1.5±0.1
0.4−+00..015
Abbreviated symbol : DF
2SD1768S
2.3+−00..21 0.5±0.1
3±0.2
4±0.2
(1) Base (2) Collector (3) Emitter
2±0.2
3Min.
5.5+−00..31 1.5±0.3 0.9
(15Min.)
1.5 2.5
9.5±.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD186 |
ETC |
NPN Transistor | |
2 | 2SD1861 |
Rohm |
Power transistor | |
3 | 2SD1862 |
Rohm |
Medium Power Transistor | |
4 | 2SD1862 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
5 | 2SD1864 |
Rohm |
Power Transistor | |
6 | 2SD1864 |
GME |
Power Transistor | |
7 | 2SD1864 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
8 | 2SD1865 |
Rohm |
MEDIUM POWER TRANSISTOR | |
9 | 2SD1866 |
Rohm |
Medium Power Transistor | |
10 | 2SD1867 |
Rohm |
Power Transistor | |
11 | 2SD1868 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor | |
12 | 2SD1869 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor |