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Power Transistor (100V, 2A) 2SD1980 / 2SD1867 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. zinner circuit C B R1 R2 E R1 3.5kΩ R2 300Ω B : Base C : Collector E : Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits U.
1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. zinner circuit C B R1 R2 E R1 3.5kΩ R2 300Ω B : Base C : Collector E : Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collector-emitter voltage Emitter-base voltage VCEO VEBO 100 6 V V Collector current IC 2 3 ∗1 Collector power dissipation 2SD1980 2SD1867 PC 1 10 1 ∗2 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 Single pulse Pw=10.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD186 |
ETC |
NPN Transistor |
|
| 2 | 2SD1861 |
Rohm |
Power transistor |
|
| 3 | 2SD1862 |
Rohm |
Medium Power Transistor |
|
| 4 | 2SD1862 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 5 | 2SD1863 |
Rohm |
Power Transistor |
|
| 6 | 2SD1864 |
Rohm |
Power Transistor |
|
| 7 | 2SD1864 |
GME |
Power Transistor |
|
| 8 | 2SD1864 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 9 | 2SD1865 |
Rohm |
MEDIUM POWER TRANSISTOR |
|
| 10 | 2SD1866 |
Rohm |
Medium Power Transistor |
|
| 11 | 2SD1868 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor |
|
| 12 | 2SD1869 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor |
|