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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier and low speed switching ·Suitable for output stages of 30 ~35 watts audio amplifi.
CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 70V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 3A; VCE=2V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V 2SD180 MIN TYP. MAX UNIT 1.5 V 1.5 V 0.1 mA 0.5 mA 30 180 150 pF 10 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information con.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1800 |
Sanyo Semicon Device |
NPN Epitaxial Silicon Transistor |
|
| 2 | 2SD1801 |
ON Semiconductor |
Bipolar Transistor |
|
| 3 | 2SD1801 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 2SD1801 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SD1802 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | 2SD1802 |
TRANSYS |
NPN Transistor |
|
| 7 | 2SD1802 |
GME |
NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SD1802 |
ON Semiconductor |
Bipolar Transistor |
|
| 9 | 2SD1802 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SD1802 |
UTC |
NPN SILICON TRANSISTOR |
|
| 11 | 2SD1802 |
Weitron Technology |
NPN Transistor |
|
| 12 | 2SD1803 |
Kexin |
NPN Transistors |
|