2SD1868 - Hitachi Semiconductor

2SD1868 Silicon NPN Epitaxial Type Transistor

2SD1868, 2SD1869 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD1868, 2SD1869 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage .

Features

B 60 to 120 C 100 to 200 VBE VCE(sat) fT Cob 1 Typ — Max — Unit V Test conditions I C = 10 µA, IE = 0 — — V I C = 1 mA, RBE = ∞ 2SD1868 I CBO 2SD1869 DC current transfer ratio 60 30 — — — — D — — — — 140 3.8 320 — 1.5 2 — — V V MHz pF VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA I C = 30 mA, IB = 3 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SD1868 and 2SD1869 are grouped by h FE1 as follows. 160 to 320 2 2SD1868, 2SD1869 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Collector Current IC (mA) Typical Output C.