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Transistors Power transistor (40V, 2A) 2SD1759 / 2SD1861 2SD1759 / 2SD1861 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239. zEquivalent circuit C B RBE 4kΩ C : Collector B : Base E : Emitter E zAbsolute maximum ratings (Ta=25°C) Parameter Collector-b.
1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239. zEquivalent circuit C B RBE 4kΩ C : Collector B : Base E : Emitter E zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SD1861 2SD1759 Symbol VCBO VCER VEBO IC PC Junction temperature Tj Storage temperature Tstg ∗ Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. Limits 40 40 5 2 1∗ 1 10 150 −55 to +150 Unit.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD186 |
ETC |
NPN Transistor |
|
| 2 | 2SD1862 |
Rohm |
Medium Power Transistor |
|
| 3 | 2SD1862 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 4 | 2SD1863 |
Rohm |
Power Transistor |
|
| 5 | 2SD1864 |
Rohm |
Power Transistor |
|
| 6 | 2SD1864 |
GME |
Power Transistor |
|
| 7 | 2SD1864 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 8 | 2SD1865 |
Rohm |
MEDIUM POWER TRANSISTOR |
|
| 9 | 2SD1866 |
Rohm |
Medium Power Transistor |
|
| 10 | 2SD1867 |
Rohm |
Power Transistor |
|
| 11 | 2SD1868 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor |
|
| 12 | 2SD1869 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor |
|