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2SD1608 |
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| Part Number | 2SD1608 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reli... |
| Features |
Emitter Sustaining Voltage IC= 50mA; L= 10mH
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 4A; IB= 8mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 8A; IB= 80mA
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
ICEO
Collector Cutoff Current
VCE= 100V; IB= 0
hFE
DC Current Gain
IC= 4A; VCE= 3V
Switching times
ton
Turn-on Time
tstg
Storage Time
IC= 4A, IB1= IB2= 8mA
tf
Fall Time
2SD1608
MIN TYP. MAX UNIT
120
V
1.5
V
3.0
V
2.0
V
3.5
V
... |
| Document |
 2SD1608 Data Sheet
PDF 212.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1600 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1601 |
Inchange Semiconductor |
Power Transistor |
|
| 3 | 2SD1602 |
Inchange Semiconductor |
Power Transistor |
|
| 4 | 2SD1603 |
Inchange Semiconductor Company |
Silicon NPN Darlington Power Transistor |
|
| 5 | 2SD1603 |
Hitachi Semiconductor |
NPN Transistor |
|