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2SD1605 |
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| Part Number | 2SD1605 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 1.5A ·Complement to Type 2SB1105 ·Minimum Lot-to-Lot variations for robust device performance an... |
| Features |
5mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 3mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 30mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 1.5A; IB= 3mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 3A; IB= 30mA
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
ICEO
Collector Cutoff Current
VCE= 100V; RBE= ∞
hFE
DC Current Gain
IC= 1.5A; VCE= 3V
VECF
C-E Diode Forward Voltage
IF= 3A
Switching times
ton
Turn-on Time
tstg
Storage Time
IC= 1.5A, IB1= IB2= 3mA
tf
Fall... |
| Document |
 2SD1605 Data Sheet
PDF 210.28KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1600 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1601 |
Inchange Semiconductor |
Power Transistor |
|
| 3 | 2SD1602 |
Inchange Semiconductor |
Power Transistor |
|
| 4 | 2SD1603 |
Inchange Semiconductor Company |
Silicon NPN Darlington Power Transistor |
|
| 5 | 2SD1603 |
Hitachi Semiconductor |
NPN Transistor |
|