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2SD1601 |
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| Part Number | 2SD1601 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 2A ·Complement to Type 2SB1101 ·Minimum Lot-to-Lot variations for robust device performance and r... |
| Features |
RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2A; IB= 4mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 4A; IB= 40mA
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
ICEO
Collector Cutoff Current
VCE= 50V; RBE= ∞
hFE
DC Current Gain
IC= 2A; VCE= 3V
VECF
C-E Diode Forward Voltage
IF= 4A
Switching times
ton
Turn-on Time
tstg
Storage Time
IC= 2A, IB1= IB2= 4mA
tf
Fall Time
2SD1601
... |
| Document |
 2SD1601 Data Sheet
PDF 210.87KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1600 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1602 |
Inchange Semiconductor |
Power Transistor |
|
| 3 | 2SD1603 |
Inchange Semiconductor Company |
Silicon NPN Darlington Power Transistor |
|
| 4 | 2SD1603 |
Hitachi Semiconductor |
NPN Transistor |
|
| 5 | 2SD1604 |
Hitachi Semiconductor |
NPN Transistor |
|