Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 400(Min) @ IC= 2A, VCE= 2V ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage and low-speed switching applications ABSOLUTE MAXIMUM.
NPN Darlington Power Transistor 2SD1592 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 5mA ICBO Collector Cutoff Current VCB= 400V; IE= 0 hFE -1 DC Current Gain IC= 2A ; VCE= 2V hFE -2 DC Current Gain IC= 3A ; VCE= 2V Switching times ton Turn-on Time tstg Storage Time Ic=3A；IB1= IB2= 30mA RL= 50Ω; VCC= 150V tf Fall Time hFE-1 Classifications M L K.
2SD1592 - NEC
of circuits, software and other related information in this document are provided for illustrative purposes in semicond.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1590 |
Inchange Semiconductor Company |
Silicon NPN Darlington Power Transistor |
|
| 2 | 2SD1591 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1591 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD1593 |
ETC |
NPN Silicon Epitaxial Transistor |
|
| 5 | 2SD1594 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1594 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SD1595 |
ETC |
NPN Silicon Transistor |
|
| 8 | 2SD1597 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SD1599 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD1500 |
Inchange Semiconductor |
Power Transistor |
|
| 11 | 2SD1503 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD1504 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|