2SD1597 - INCHANGE

2SD1597 NPN Transistor

·Collector Current -IC= 30A ·High DC Current Gain- : hFE= 1000(Min)@ IC= 15A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .

Features

n Voltage IC= 25mA ;IB=0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ;IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 30A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 30A; IB= 0.1A ICEO Collector Cutoff Current VCE= 60V; IB= 0 ICBO Collector Cutoff Current VCB= 120V;IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC=0 hFE DC Current Gain IC= 15A ; VCE= 2V 2SD1597 MIN TYP. MAX UNIT 120 V 7 V 2.0 V 2.5 V 1.0 mA 10 μA 5 mA 1000 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. Th.