2SD1590 - Inchange Semiconductor Company

2SD1590 Silicon NPN Darlington Power Transistor

·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A ·Complement to Type 2SB1099 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃.

Features

℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE -1 DC Current Gain IC= 3A; VCE= 2V hFE -2 DC Current Gain IC= 5A; VCE= 2V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 3A, IB1= IB2= 3mA; RL= 16.7Ω; VCC≈ 50V  hFE-1 Classifications M L K 2000-5000 3000-7000 5000-15000 2SD1590 MIN TYP. MAX UNIT 1.5 V 2.0 V 1.0 μA 3.0 .