2SD1594 - INCHANGE

2SD1594 NPN Transistor

·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 100V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage .

Features

or-Emitter Sustaining Voltage IC= 50mA; IB1= 0.5A, L= 1mH VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 100V;IE= 0 ICER Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 100V;RBE= 51Ω@TC= 125℃ VCE=100V;VBE(off)= 1.5V VCE=100V;VBE(off)=1.5V@TC= 125℃ VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V hFE-2 DC Current Gain IC= 3A ; VCE= 5V hFE-3 DC Current Gain IC= 5A ; VCE= 5V Switching Times ton Turn-on Time tstg Stora.