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2SD1592 |
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| Part Number | 2SD1592 |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 400(Min) @ IC= 2A, VCE= 2V ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 2A ·Mini... |
| Features |
NPN Darlington Power Transistor
2SD1592
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 5mA
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
hFE -1
DC Current Gain
IC= 2A ; VCE= 2V
hFE -2
DC Current Gain
IC= 3A ; VCE= 2V
Switching times
ton
Turn-on Time
tstg
Storage Time
Ic=3A；IB1= IB2= 30mA RL= 50Ω; VCC= 150V
tf
Fall Time
hFE-1 Classifications M L K... |
| Document |
 2SD1592 Data Sheet
PDF 189.63KB |
| Distributor | Stock | Price | Buy |
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