2SD1599 - INCHANGE

2SD1599 NPN Transistor

·High DC Current Gain- : hFE = 1000(Min)@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications .

Features

or 2SD1599 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A ,IB= 12mA 2.0 V VBE(on) Base-Emitter On Voltage IC= 3.0A ; VCE= 3V 2.5 V ICBO Collector Cutoff Current VCB= 80V, IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 80V, IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2 mA hFE-1 DC Current Gain IC= 0.5A ; VCE= 3V 1000 hFE-2 DC Current Gain Switching times ton Turn-o.