2SD144 - INCHANGE

2SD144 NPN Transistor

·DC Current Gain -hFE = 40(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 50V(Min) ·With TO-66 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vol.

Features

tter Sustaining Voltage IC= 20mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 100V; VEB= 0 ICEO Collector Cutoff Current VCE= 50V; IB= 0 MIN MAX UNIT 50 V 1.0 V 1.8 V 0.1 mA 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE DC Current Gain IC= 1A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 40 200 10 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notifi.