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: —— A SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . High DC Current Gain of 200 to 1200 at VC E=5V, I C=0.5A . Low V CE ( sat ) of 1.0V (Max.) at Ic=lA, I B=0.02A . Collector Power Dissipation of 25W at Tc=25 C Unit in mm 10:3 MAX. j -r 7.0 . -rr ^ "/ k 03.2±O.2 s CO V X C5 aH o << • 3 to MAXIMUM RA.
. High DC Current Gain of 200 to 1200 at VC E=5V, I C=0.5A . Low V CE ( sat ) of 1.0V (Max.) at Ic=lA, I B=0.02A . Collector Power Dissipation of 25W at Tc=25 C
Unit in mm
10:3 MAX.
j -r 7.0
.
-rr ^
"/
k
03.2±O.2
s CO
V
X
C5
aH
o <<
•
3
to
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
SYMBOL VcBO v CE0 VEBO ic
RATING 50 50
UNIT
1 1
1.4 ii
+0.25 0.76-0.15
,
2.5 4±0.25
i
. 1.2
i
2.54 ± a 25
+ 1 12 3'
Base Current
IB
0.5
Collector Power
Ta=25 C
2.0
Dissipation
Tc=25°C
25
Junction Temperat.
2SD1405 - INCHANGE
·High DC Current Gain : hFE= 200(Min) @IC= 0.5A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 1A ·Collec.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1400 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1401 |
Sanyo Semicon Device |
NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR |
|
| 3 | 2SD1402 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD1402 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD1403 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1403 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor |
|
| 7 | 2SD1403 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SD1404 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 9 | 2SD1406 |
Toshiba |
Silicon NPN Transistor |
|
| 10 | 2SD1406 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SD1406 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SD1407 |
Toshiba |
Silicon NPN Transistor |
|