·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·B/W TV horizontal deflection output applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO.
Collector-Emitter Sustaining Voltage IC= 50mA; L= 50mH V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICES Collector Cutoff Current VCE= 250V; VBE= 0 hFE DC Current Gain IC= 5A ; VCE= 1.5V fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V VECF C-E Diode Forward Voltage IF= 6A tf Fall Time ICP= 5A; IB1(end)= 0.5A 2SD1404 MIN TYP. MAX UNIT 150 V 300 V 6 V 1.5 V 1.5 V 1 mA 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1400 |
INCHANGE |
NPN Transistor | |
2 | 2SD1401 |
Sanyo Semicon Device |
NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR | |
3 | 2SD1402 |
INCHANGE |
NPN Transistor | |
4 | 2SD1402 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SD1403 |
INCHANGE |
NPN Transistor | |
6 | 2SD1403 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
7 | 2SD1403 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SD1405 |
Toshiba |
Silicon NPN Transistor | |
9 | 2SD1405 |
INCHANGE |
NPN Transistor | |
10 | 2SD1406 |
Toshiba |
Silicon NPN Transistor | |
11 | 2SD1406 |
INCHANGE |
NPN Transistor | |
12 | 2SD1406 |
SavantIC |
SILICON POWER TRANSISTOR |