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·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Complement to Type 2SB1015 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.
Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 0.5A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V, ftest= 1MHz fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 5V Switching times ton Turn-on Time tstg Storage Time tf Fall Time IB1= IB2= 0.2A; VCC= 30V; RL= 15Ω; PW= 20μs;Duty Cycle≤1% hFE classifications O Y GR 60-120 100-200 150-300 2SD140.
2SD1406 - SavantIC
·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type .
2SD1406 - Toshiba
SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES . High DC Current .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1400 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1401 |
Sanyo Semicon Device |
NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR |
|
| 3 | 2SD1402 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD1402 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD1403 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1403 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor |
|
| 7 | 2SD1403 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SD1404 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 9 | 2SD1405 |
Toshiba |
Silicon NPN Transistor |
|
| 10 | 2SD1405 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SD1407 |
Toshiba |
Silicon NPN Transistor |
|
| 12 | 2SD1407 |
INCHANGE |
NPN Transistor |
|