·With TO-3PN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For CRT horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETE.
aturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA; IB=0 IE=1mA; IC=0 IC=5A; IB=1A IC=5A; IB=1A VCB=800V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V 8 MIN 800 6 www.datasheet4u.com 2SD1403 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 5.0 1.5 10 10 V V µA µA 3 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1403 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 .
·High Breakdown Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1400 |
INCHANGE |
NPN Transistor | |
2 | 2SD1401 |
Sanyo Semicon Device |
NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR | |
3 | 2SD1402 |
INCHANGE |
NPN Transistor | |
4 | 2SD1402 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SD1404 |
INCHANGE |
Silicon NPN Power Transistor | |
6 | 2SD1405 |
Toshiba |
Silicon NPN Transistor | |
7 | 2SD1405 |
INCHANGE |
NPN Transistor | |
8 | 2SD1406 |
Toshiba |
Silicon NPN Transistor | |
9 | 2SD1406 |
INCHANGE |
NPN Transistor | |
10 | 2SD1406 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SD1407 |
Toshiba |
Silicon NPN Transistor | |
12 | 2SD1407 |
INCHANGE |
NPN Transistor |