2SD1400 - INCHANGE

2SD1400 NPN Transistor

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 80.

Features

Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.5A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V tf Fall Time IC= 2A, IB1= 0.6A, IB2= 1.2A; RL= 100Ω; VCC= 200V 2SD1400 MIN TYP. MAX UNIT 1500 V 800 V 7 V 8.0 V 1.5 V 10 μA 1.0 mA 8 3 MHz 0.7 μs NOTICE： ISC reserves the rights to make changes of the content herein the da.