·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching APPLICATIONS ·For horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER C.
down voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Fall time Diode forward voltage CONDITIONS IC=100mA; RBE=< IC=5mA; IE=0 IE=200mA; IC=0 IC=2A; IB=0.6A IC=2A; IB=0.6A VCB=800V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=10V IC=2A;IB1=0.6A; IB2=-1.2A, VCC=200V; RL=100C IEC=2.5A 40 8 MIN 800 1500 7 www.datasheet4u.com 2SD1396 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT tf VF TYP. MAX UNIT V V V 8.0 1.5 10 130 V V µA mA 3 0.7 2.0 MHz µs V 2 S.
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SD1390 |
Inchange Semiconductor |
Power Transistor | |
2 | 2SD1391 |
INCHANGE |
NPN Transistor | |
3 | 2SD1391 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SD1392 |
ETC |
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR | |
5 | 2SD1393 |
INCHANGE |
NPN Transistor | |
6 | 2SD1394 |
INCHANGE |
NPN Transistor | |
7 | 2SD1395 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Darlington Transistor | |
8 | 2SD1395 |
INCHANGE |
NPN Transistor | |
9 | 2SD1397 |
INCHANGE |
NPN Transistor | |
10 | 2SD1397 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SD1398 |
INCHANGE |
NPN Transistor | |
12 | 2SD1398 |
SavantIC |
SILICON POWER TRANSISTOR |