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Ordering number:EN1221C NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1395 Driver Applications Applications · Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers). Package Dimensions unit:mm 2010C Features · High DC current gain. · Large current capacity · Wide ASO. · On-chip Zener diode of 60±10V b.
· High DC current gain.
· Large current capacity
· Wide ASO.
· On-chip Zener diode of 60±10V between collector
and base.
· Uniformity in collector-to-base breakdown voltage
due to adoption of accurate impurity diffusion process.
· High inductive load handling capability.
Specifications
18.0 5.6
[2SD1395]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
1.2
0.8 123 2.55 2.55
2.7 14.0
0.4 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Coll.
2SD1395 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 2.5A ·Low Saturat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1390 |
Inchange Semiconductor |
Power Transistor |
|
| 2 | 2SD1391 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD1391 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD1392 |
ETC |
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR |
|
| 5 | 2SD1393 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1394 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD1396 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD1396 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD1397 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD1397 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SD1398 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD1398 |
SavantIC |
SILICON POWER TRANSISTOR |
|