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·With TO-3PN package ·High speed switching ·High voltage,high reliability ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Ts.
EO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=4.5A; IB=2A 2.0 V VBEsat Base-emitter saturation voltage IC=4.5A; IB=2A 1.3 V VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 50 µA 1.0 mA hFE DC current gain IC=3A ; VCE=10V 4 15 tf Fall time IC=4A IBend=1.5A,LB=10µH 1.0 µs ts Storage time 11 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com 2SD1391 Fig.2.
2SD1391 - INCHANGE
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performa.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1390 |
Inchange Semiconductor |
Power Transistor |
|
| 2 | 2SD1392 |
ETC |
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR |
|
| 3 | 2SD1393 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD1394 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SD1395 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Darlington Transistor |
|
| 6 | 2SD1395 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD1396 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SD1396 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD1397 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SD1397 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SD1398 |
INCHANGE |
NPN Transistor |
|
| 12 | 2SD1398 |
SavantIC |
SILICON POWER TRANSISTOR |
|